![]() New IMB improves the thermal conductivity of the insulating resin layer by approximately 50 compared to the conventional IMB by optimization of powder particle and resin material. (1) (2) (3) (4) Devices: CM = IGBT Module PM = IPM Current Rating l C (Amperes) For IPM: H = Single D = Dual C = Six in one R = Seven in one IGBT Module: H = Single D = Dual T = Six E3 = Brake Examples: CM (1) 100 (2) CM100DY-24H is a 100 Ampere, 1200 Volt, Dual IGBT Module PM 600 (1) MITSUBISHI SEMICONDUCTORS POWER MODULES MOS GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES 3.1 Numbering System (2) PM600HSA120 is a 600 Ampere, 1200 Volt, Single IPM T (4) H (3) (5) (6) (7) (8) Outline or Minor Change For IGBT Module: Voltage, V CES Volts (x50) For IPM: Voltage V CES Volts (x10) For IGBT Module: F = F series (Trench Gate) H = H series/U series For IPM S = Third Generation V = V-Series U (5) – SA (8) (5) 24 (6) 120 (7) F (8) Sep. An enhanced module insulating technology IMB (Insulated Metal Baseplate) that features a high thermal conductivity and insulation properties and its application to IGBT module and IPM are presented. ![]() The sections that follow will give specific details for each product family. This section will cover these general application issues. The general guidelines for power circuit, snubber and thermal system design are essentially the same for both product families. ![]() ![]() 3.0 General Considerations for IGBT and Intelligent Power Modules H-Series IGBT and Intelligent Power Modules are based on advanced third generation IGBT and free-wheel diode technologies. ![]()
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